Title:
化学蒸着用原料、ならびに、化学蒸着用原料入り遮光容器およびその製造方法
Document Type and Number:
Japanese Patent JP7026404
Kind Code:
B2
Abstract:
A precursor for chemical vapor deposition (CVD), which is a precursor for producing an indium oxide thin film by chemical vapor deposition, can be stored for a long period, and is easy to handle upon use when chemical vapor deposition is carried out; and a method for storing the precursor. A precursor for chemical vapor deposition, characterized by containing an alkylcyclopentadienylindium (I) (C5H4R1—In) as a main component, also containing at least one component selected from alkylcyclopentediene (C5H5R2), dialkylcyclopentadiene ((C5H5R3)2), trisalkylcyclopentadienylindium (III) ((C5H4R4)3—In) and triscyclopentadienyl indium (III) as secondary components (wherein R1 to R4 independently represent an alkyl group having 1 to 4 carbon atoms), and containing substantially no solvents.
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Inventors:
Bunichi Mizutani
Shintaro Higashi
Shintaro Higashi
Application Number:
JP2019523516A
Publication Date:
February 28, 2022
Filing Date:
June 04, 2018
Export Citation:
Assignee:
High purity chemical research institute
International Classes:
C23C16/40; C07F5/00; C07F17/00
Domestic Patent References:
| JP3088324A | ||||
| JP2163930A | ||||
| JP3190123A | ||||
| JP1094613A |
Attorney, Agent or Firm:
Shigeru Kinoshita
Yuko Sawada
Yuko Sawada