To provide a photosensitive composition to be used for a manufacturing process of a semiconductor such as an IC, manufacturing a circuit board of a liquid crystal, thermal head or the like or other photofabrication processes, and to provide a method for forming a pattern using the photosensitive composition, particularly, to provide a photosensitive composition excellent in avoiding development defects and improved in line edge roughness and pattern collapse even for formation of a fine pattern in a size of 100 nm or less, and to provide a method for forming a pattern using the photosensitive composition.
The positive resist composition contains (A) a compound which generates an acid upon irradiation of active rays or radiation, (B) a resin decomposed by an effect of an acid to increase the solubility in an alkali developing liquid, and (F) a solvent, wherein the resin of the component (B) has a repeating unit (Ba) having a diamantane structure and having 3,000 to 30,000 weight average molecular weight and 1.1 to 3.0 dispersion degree. The method for forming a pattern is carried out by using the above composition.
WADA KENJI
Hironori Honda
Toshimitsu Ichikawa
Takeshi Takamatsu
Kiyozumi Yazawa
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