Title:
SELECTIVE FORMATION OF SILICON
Document Type and Number:
Japanese Patent JPS5524459
Kind Code:
A
Abstract:
PURPOSE:To obtain Si layer superior in crystallinity and surface condition and uniform in thickness by the selective formation thereof at lower temperatures than 950 deg.C after the pre-heating thereof in hydrogen atmosphere at higher temperature than 950 deg.C. CONSTITUTION:Insulating film 2 is formed at one surface of a mono-crystalline Si substrate 1, and exposed Si surface 4 is obtained by providing an opening in said film 2. Next, said substrate 1 is pre-heated in hydrogen atmosphere at higher temperatures than 950 deg.C, and selective Si layer formation is made at said surface 4 at lower temperatures than 950 deg.C. The formation of the polycrystal of Si can be prevented by the former process and Si layer uniform in thickness can be obtained by the latter process. Good layer formation surface can be obtained when the 100 faces inclined in 100 directions are used as main surface of said Si substrate 1. This inclination is 3-6 deg. desirably.
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Inventors:
KAWAMURA MASAO
MAKI MICHIYOSHI
KOBAYASHI KAZUNARI
TAMAOKI YOUICHI
IKEDA TAKAHIDE
AKAHA RIYOUZOU
MAKI MICHIYOSHI
KOBAYASHI KAZUNARI
TAMAOKI YOUICHI
IKEDA TAKAHIDE
AKAHA RIYOUZOU
Application Number:
JP9721078A
Publication Date:
February 21, 1980
Filing Date:
August 11, 1978
Export Citation:
Assignee:
HITACHI LTD
International Classes:
C30B25/02; C30B29/06; H01L21/205; (IPC1-7): C30B25/02; H01L21/205
Domestic Patent References:
| JPS494581A | 1974-01-16 |