SELF-LIMITING REACTION DEPOSITION APPARATUS AND SELF-LIMITING REACTION DEPOSITION METHOD

Japanese Patent JP2013082959

A

To provide an atomic layer deposition apparatus and an atomic layer deposition method, which can enhance stability of film deposition.

The atomic layer deposition apparatus 100 includes: a first guide roller 11A configured to change, while supporting a first surface of a base material conveyed by a roll-to-roll process, a conveying direction of the base material from a first direction to a second direction that is not parallel to the first direction; a second guide roller 11B configured to change, while supporting the first surface of the base material, the conveying direction of the base material from the second direction to a third direction that is not parallel to the second direction; and a first head 12A disposed between the first guide roller and the second guide roller, which faces a second surface opposite to the first surface of the base material, and discharges, towards the second surface, a raw material gas for atomic layer deposition.

JP6795675	Substrate processing equipment, semiconductor equipment manufacturing methods and programs
JPH11172437	PRODUCTION OF THIN FILM AND DEVICE FOR PRODUCING THE SAME
JP5768890	Plasma film deposition equipment

TAKENAKA HIROYA
HIRATSUKA RYOICHI
SEKINE MASAAKI
MATSUO TAKUJI
HONDA HIDETOSHI

JP2011222579A

May 09, 2013

October 07, 2011

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SONY CORP

C23C16/44

Junichi Omori
Ori Akira
Teppei Nakamura
Nozomi Yoshida
Ayako Kaneko
Shintaro Kanayama

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