To provide a semiconductor device that can improve mobility of carriers in a channel region and operate faster.

A gate structure G1 is formed on a semiconductor substrate 2 of a first conductivity type. Electrode regions 5 of a second conductivity type are formed within surfaces of the semiconductor substrate 2 on both sides of the gate structure G1. Low-specific-inductive-capacity layers 6 are formed right below the electrode regions 5. The low-specific-inductive-capacity layers 6 have less specific inductive capacity than the electrode regions 5 have or less specific inductive capacity than the semiconductor substrate 2 has.