半導体装置とその製造方法 - 株式会社デンソー

Title:

半導体装置とその製造方法

Document Type and Number:

Japanese Patent JP7168094

Kind Code:

B2

Abstract:

A semiconductor device includes: a semiconductor substrate; a trench gate portion on the semiconductor substrate; a surface electrode covering an upper side of the semiconductor substrate; and an interlayer insulating film insulating the trench gate portion from the surface electrode. The semiconductor substrate includes: a drift region; a body region above the drift region; a barrier region below at least a part of the body region; and a pillar region extending from the surface of the semiconductor substrate to the barrier region and in Schottky contact with the surface electrode. The interlayer insulating film has an acute angle between a top surface and a side surface thereof.

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Inventors:

Satoshi Kuwano
Go Nishiwaki
Yuta Furumura

Application Number:

JP2021541824A

Publication Date:

November 09, 2022

Filing Date:

August 26, 2019

Export Citation:

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Assignee:

株式会社デンソー

International Classes:

H01L21/336; H01L21/28; H01L21/8234; H01L27/06; H01L27/088; H01L29/417; H01L29/47; H01L29/739; H01L29/78; H01L29/861; H01L29/868; H01L29/872

Domestic Patent References:

JP2018125443A
JP2017028236A
JP2003258255A
JP2019003967A
JP2010147380A
JP2018181949A

Foreign References:

US20150221735
US9786754

Attorney, Agent or Firm:

Patent Attorney Corporation Kaiyu International Patent Office

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