To improve the life of hot carriers in a semiconductor device having an LDD structure by forming a titanium silicide film on a gate electrode, an N-type source/drain region and an N+type source/drain region formed on a P type semiconductor substrate.

Since a titanium silicide film 9 having a high density of electrons is formed also on a lightly doped N-type source/drain region 5, even if hot carriers are trapped by an oxide film 4A formed at the sidewalls of a gate electrode 3 similarly to a conventional way, deterioration in characteristics due to such hot carriers can be suppressed, and hence the life of the hot carriers can be extended. Further, while the step of removing an LDD forming sidewall spacer film is added in order to manufacture such a semiconductor device, the film 9 having a high density of electrons can be formed also on the lightly doped region 5, and hence the life of the hot carriers can be increased.