Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, POWER CONVERSION DEVICE, THREE-PHASE MOTOR SYSTEM, AUTOMOBILE, AND RAILWAY VEHICLE
Document Type and Number:
Japanese Patent JP2020038944
Kind Code:
A
Abstract:
To improve the performance of a semiconductor device.SOLUTION: A semiconductor device has a SiC power MISFET formation region MR and a SiC-SBD formation region DR. On an n type semiconductor substrate 11, an ntype epitaxial layer 12 is formed. In the ntype epitaxial layer 12, a ptype body region 14 is formed, and in the ptype body region 14, an ntype source region 19 and an ntype current diffusion region 18 are formed. A gate electrode 21 is formed in a trench TR that penetrates the ntype source region 19 and reaches the ptype body region 14. A source wiring electrode 2 is formed on an interlayer insulating film 22, and the source wiring electrode 2 is electrically connected to the ntype source region 19 in the SiC power MISFET formation region MR via a barrier metal film 23, and electrically connected to the ntype epitaxial layer 12 in the SiC-SBD formation region DR.SELECTED DRAWING: Figure 3
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Inventors:
TEGA NAOKI
MATSUMOTO DAISUKE
SUTO TAKERU
WATANABE NAOKI
MASUDA TORU
MATSUMOTO DAISUKE
SUTO TAKERU
WATANABE NAOKI
MASUDA TORU
Application Number:
JP2018166352A
Publication Date:
March 12, 2020
Filing Date:
September 05, 2018
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L29/78; B60L9/18; B60L9/24; H01L21/28; H01L21/336; H01L21/8234; H01L27/06; H01L27/088; H01L29/06; H01L29/12; H01L29/423; H01L29/47; H01L29/49; H01L29/861; H01L29/868; H01L29/872
Domestic Patent References:
| JP2018049951A | 2018-03-29 | |||
| JP2002299625A | 2002-10-11 | |||
| JP2015012294A | 2015-01-19 | |||
| JP2015090883A | 2015-05-11 |
Foreign References:
| WO2016129068A1 | 2016-08-18 | |||
| WO2016038695A1 | 2016-03-17 | |||
| WO2015189929A1 | 2015-12-17 |
Attorney, Agent or Firm:
Tsutsui International Patent Office