Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2019029581
Kind Code:
A
Abstract:
To provide a semiconductor device capable of improving adhesiveness between a plated film and a wiring layer.SOLUTION: A semiconductor device manufacturing method according to one embodiment comprises the steps of: forming on a semiconductor substrate, a wiring layer with a surface coated with an oxide film; removing part of the oxide film by dry etching to form a first opening to expose part of a wiring layer in the oxide film; coating the wiring layer and forming a second opening leading to the first opening and forming a passivation film composed of an insulating resin material; and growing a plated film on the wiring layer exposed from the first opening and the second opening.SELECTED DRAWING: Figure 3
Inventors:
SUKEGAWA MITSUHIRO
MATSUMURO YOSHINORI
HANAWA TOSHIKAZU
YAMADA KENTARO
MATSUMURO YOSHINORI
HANAWA TOSHIKAZU
YAMADA KENTARO
Application Number:
JP2017149953A
Publication Date:
February 21, 2019
Filing Date:
August 02, 2017
Export Citation:
Assignee:
RENESAS ELECTRONICS CORP
International Classes:
H01L21/3205; H01L21/336; H01L21/768; H01L23/522; H01L29/78
Attorney, Agent or Firm:
Fukami patent office