Title:
SEMICONDUCTOR DEVICE, METAL FILM MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2013004539
Kind Code:
A
Abstract:
To provide a semiconductor device, a metal film manufacturing method, and a semiconductor device manufacturing method, which enable high integration.
A semiconductor device according to an embodiment comprises: a semiconductor substrate; an arsenic diffusion layer formed on the semiconductor substrate and containing arsenic; and a metal film formed on the arsenic diffusion layer. The metal film contains arsenic and at least one metal selected from a group consisting of tungsten, titanium, ruthenium, hafnium, and tantalum.
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Inventors:
MATSUDA TETSURO
KURAGUCHI TOMOMI
KURAGUCHI TOMOMI
Application Number:
JP2011130647A
Publication Date:
January 07, 2013
Filing Date:
June 10, 2011
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L21/225; H01L29/78; H01L21/28; H01L21/285; H01L21/336; H01L29/417
Attorney, Agent or Firm:
Masahiko Hinataji