To suppress a void occurrence caused by electromigration at a connection place of a thin width wiring and a thick width winding during winding.

A semiconductor device includes a first metal wiring 11 which has a first width, and a second metal wiring 12 which is connected to the first metal wiring 11 and has a second width wider than the first width. The first metal wiring 11 and the second metal wiring 12 are the same layer. The second metal wiring 12 includes a slit part 14 in which an insulating film 31 is embedded at a near part of a connection place 13 with the first metal wiring 11. A distance from the connection place 13 to the slit part 14 is equal to or more than the first width and less than the second width. Each third width of plural wiring parts constituting the near part is equal to or more than the first width and less than the second width.