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Title:
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC EQUIPMENT
Document Type and Number:
Japanese Patent JP2013168419
Kind Code:
A
Abstract:

To provide a highly-reliable semiconductor device.

A semiconductor device 30 comprises: a semiconductor substrate 31; an interlayer insulating layer 32 formed on the semiconductor substrate 31; a junction electrode 33 formed on a surface of the interlayer insulating layer 32; and a metal film 35 covering the whole area of a junction surface composed of the interlayer insulating layer 32 and the junction electrode 33.


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Inventors:
HAGIMOTO MASAYA
FUJII NOBUTOSHI
AOYANAGI KENICHI
Application Number:
JP2012029429A
Publication Date:
August 29, 2013
Filing Date:
February 14, 2012
Export Citation:
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Assignee:
SONY CORP
International Classes:
H01L23/532; H01L21/3205; H01L21/768; H01L27/146
Domestic Patent References:
JP2012019147A2012-01-26
JP2007103546A2007-04-19
JP2008258311A2008-10-23
JP2010219339A2010-09-30
JP2011049270A2011-03-10
Foreign References:
US20100219529A12010-09-02
Attorney, Agent or Firm:
Shinto International Patent Office



 
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