To miniaturize a semiconductor device with a contact trench structure.
A semiconductor device comprises a first conductive type semiconductor substrate, a first conductive type semiconductor layer formed on the first conductive type semiconductor substrate, a second conductive type base layer formed on the first conductive type semiconductor layer, a first conductive type diffusion layer formed on the second conductive type base layer, a plurality of stripe like trenches formed from the front surface of the first conductive type diffusion layer to the first conductive type semiconductor layer at a predetermined interval, a first insulating layer formed on a side surface and a front surface in each trench, a gate electrode comprising a metallic particle embedded in the trench via the first insulating film, a first electrode formed on the diffusion layer, and a second electrode formed on the rear surface of the semiconductor substrate.
| JP2009016525 | SEMICONDUCTOR DEVICE |
| JPS6414968 | FORMATION OF GATE ELECTRODE |
| JPH0218966 | NERVE NETWORK ELEMENT |
OKUMURA HIDEKI
KOZUKI SHIGEO
IIJIMA YASUYUKI
Kazuhiko Tamura