To provide a semiconductor device and a semiconductor sensor which have proper operating characteristics, by suppressing damages suffered during a carbon nanotube manufacturing process.
The semiconductor device comprises a substrate 11, a gate electrode 16 formed in a concave portion 11a formed in the surface of the substrate 11, a gate insulating film 12 covering the surface of the substrate 11 and the gate electrode 16, a carbon nanotube 13 formed on the gate insulating film 12 so that the longitudinal direction lies in the lengthwise direction of the gate electrode 16, and the source electrode 14 and the drain electrode 15 which are formed on the gate insulating film 12, separated from each other in the longitudinal direction of the carbon nanotube 13 and are electrically connected with the carbon nanotube 13. The gate electrode 16 is formed below the carbon nanotube 13 via the gate insulating film 12.
HARADA NAOKI
YAMAGUCHI YOSHITAKA
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