Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2018152387
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide an outer peripheral structure that can obtain sufficient breakdown voltage.SOLUTION: The present invention relates to a semiconductor device having an outer peripheral structure enabling high withstand voltage. As a technology for increasing a withstand voltage of the semiconductor device, an outer peripheral structure using a guard ring for alleviating the concentration of buried electric field in a diffusion layer is known, but it is difficult to stably obtain a sufficient breakdown voltage. In the present invention, a trench filled with an oxide film is formed between a P-type anode diffusion layer and a P-type guard ring diffusion layer, thereby alleviating the electric field and improving the breakdown voltage.SELECTED DRAWING: Figure 2
Inventors:
CHEN YI
Application Number:
JP2017045530A
Publication Date:
September 27, 2018
Filing Date:
March 10, 2017
Export Citation:
Assignee:
SANKEN ELECTRIC CO LTD
International Classes:
H01L29/06; H01L29/41; H01L29/861; H01L29/868