Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2021141332
Kind Code:
A
Abstract:
To provide a semiconductor device having stable electric characteristics.SOLUTION: A transistor has first to third oxide semiconductor layer, a gate electrode, and a gate insulation layer. The second oxide semiconductor layer has a part provided between the first oxide semiconductor layer and the third semiconductor layer. The gate insulation layer includes a region contacted with an upper surface of the third oxide semiconductor layer, the gate electrode and the upper surface of the above mentioned part include a region overlapped each other via the gate insulation layer. The gate electrode and a side surface in a channel width direction of the above mentioned part have a region facing each other via the gate insulation layer. The second oxide semiconductor layer has a region of which a thickness is 2 nm or more and is less than 8 nm, and the second oxide semiconductor layer has the length of the channel width direction which is less than 60 nm.SELECTED DRAWING: Figure 1
Inventors:
KOBAYASHI YOSHIYUKI
MATSUDA SHIMPEI
YAMAZAKI SHUNPEI
MATSUDA SHIMPEI
YAMAZAKI SHUNPEI
Application Number:
JP2021075868A
Publication Date:
September 16, 2021
Filing Date:
April 28, 2021
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L29/786; H01L21/28; H01L21/8234; H01L27/088; H01L27/146; H01L29/423; H01L29/49
Domestic Patent References:
| JP2013089613A | 2013-05-13 | |||
| JP2009094494A | 2009-04-30 | |||
| JP2013243352A | 2013-12-05 | |||
| JP2009135350A | 2009-06-18 | |||
| JP2013179286A | 2013-09-09 |