Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2023157870
Kind Code:
A
Abstract:
To provide novel semiconductor devices.SOLUTION: A unipolar semiconductor device includes a vertical-channel transistor. By using the larger of the gate-source parasitic capacitance and the gate-drain parasitic capacitance of the vertical-channel transistor as the bootstrap capacitance, a semiconductor device with a small occupied area can be realized. By using an oxide semiconductor in the semiconductor layer of the vertical-channel transistor, the dielectric breakdown voltage between the source and drain can be increased and the channel length can be shortened. In addition, stable operation can be achieved even in high temperature environments.SELECTED DRAWING: Figure 1
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Inventors:
KUSUNOKI KOJI
KAWASHIMA SUSUMU
SHISHIDO HIDEAKI
ATAMI TOMOAKI
SAITO MOTOHARU
KAWASHIMA SUSUMU
SHISHIDO HIDEAKI
ATAMI TOMOAKI
SAITO MOTOHARU
Application Number:
JP2023064668A
Publication Date:
October 26, 2023
Filing Date:
April 12, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L29/786; G09F9/30; H01L21/336
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