Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6045544
Kind Code:
B2
Abstract:
A semiconductor device packaged in three dimensions comprises a first thin film device, a second thin film device, and a third thin film device, each of the first, second, and third thin film devices comprising a first insulating film, a first electrode formed over the first insulating film, a second insulating film formed over the first electrode, first and second thin film transistors formed over the second insulating film, wherein the first thin film transistor is connected to the first electrode through a first contact hole, a third insulating film formed over the first and second thin film transistor, a second electrode formed over the third insulating film, wherein the second electrode is connected to the second thin film transistor through a second contact hole, and a fourth insulating film formed over the third insulating film and the second electrode.
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Inventors:
Akira Ishikawa
Application Number:
JP2014202761A
Publication Date:
December 14, 2016
Filing Date:
October 01, 2014
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/02; G02F1/1368; G09F9/30; H01L21/336; H01L21/77; H01L21/8238; H01L21/84; H01L27/08; H01L27/092; H01L27/12; H01L27/32; H01L29/786; H01L51/50; H05B33/10; H05B33/12; H05B33/14; H05B33/22; G02F1/1333
Domestic Patent References:
| JP5121103B1 | ||||
| JP2154232A | ||||
| JP2000243943A | ||||
| JP10209464A | ||||
| JP11261001A | ||||
| JP10223833A |