Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP6255069
Kind Code:
B2
Abstract:
A semiconductor device of stable electrical characteristics, whose oxygen vacancies in a metal oxide is reduced, is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, a first metal oxide film over the gate insulating film, a source electrode and a drain electrode which are in contact with the first metal oxide film, and a passivation film over the source electrode and the drain electrode. A first insulating film, a second metal oxide film, and a second insulating film are stacked sequentially in the passivation film.
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Inventors:
Nakanoha Hajime
Mai Sugikawa
Noda Kosei
Mai Sugikawa
Noda Kosei
Application Number:
JP2016154393A
Publication Date:
December 27, 2017
Filing Date:
August 05, 2016
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/336; H01L29/786
Domestic Patent References:
| JP2011054951A | ||||
| JP2007123861A | ||||
| JP2010114413A | ||||
| JP2010182819A | ||||
| JP2010073894A | ||||
| JP2008218495A | ||||
| JP2010021520A | ||||
| JP2007073698A | ||||
| JP2010016163A | ||||
| JP2010272663A |
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