Title:
SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR ELEMENT MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2013041914
Kind Code:
A
Abstract:
To provide a semiconductor element having a buffer layer, which fixes reference potential of a channel, and provide a manufacturing method of the same.
A semiconductor element comprises: a substrate 10; a buffer layer 20 provided on the substrate and including at least one layer of a laminate in which a plurality types of nitride semiconductors having different energy gaps from each other are laminated; a channel layer 30 of a nitride semiconductor provided on the buffer layer; a side electrode 60 electrically connected to side faces of the buffer layer; and channel electrodes 52, 56 formed above the channel layer and electrically connected with the channel layer.
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Inventors:
TAMURA RYOSUKE
SATO YOSHIHIRO
NOMURA TAKEHIKO
SATO YOSHIHIRO
NOMURA TAKEHIKO
Application Number:
JP2011176716A
Publication Date:
February 28, 2013
Filing Date:
August 12, 2011
Export Citation:
Assignee:
ADVANCED POWER DEVICE RES ASS
International Classes:
H01L21/338; H01L21/28; H01L21/336; H01L29/778; H01L29/78; H01L29/812
Attorney, Agent or Firm:
Longhua International Patent Service Corporation