SEMICONDUCTOR INTEGRATED CIRCUIT

Title:

SEMICONDUCTOR INTEGRATED CIRCUIT

Document Type and Number:

Japanese Patent JP2005109400

Kind Code:

A

Abstract:

To provide a semiconductor integrated circuit having a device higher in a cutoff frequency fu with respect to noise.

The semiconductor integrated circuit includes a plurality of second conductivity-type deep well layers 9 that are provided on a first conductivity-type semiconductor substrate 8 and are isolated from each other, first conductivity-type back gate well layers 10 each one of which is provided at the second conductivity-type deep well layers 9, second conductivity-type MIS transistor devices 3 each one of which is provided at the first conductivity-type back gate well layers 10 with the first conductivity-type back gate well layers 10 as backgates and are connected in parallel, and second conductivity-type isolated well layers 4 that are provided at the first conductivity-type back gate well layers 10, surround the second conductivity-type MIS transistor devices 3 and reach the second conductivity-type deep well layers 9.

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Inventors:

MITSUNAKA TAKESHI
MIYAMOTO MASAYUKI
SUYAMA NAOHIRO

Application Number:

JP2003344381A

Publication Date:

April 21, 2005

Filing Date:

October 02, 2003

Export Citation:

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Assignee:

SHARP KK

International Classes:

H01L21/761; H01L27/08; (IPC1-7): H01L27/08; H01L21/761

Attorney, Agent or Firm:

Hiroshi Yamazaki
Atsushi Maeda

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