To provide a high performance and highly reliable semiconductor laser device which prevents decrease of an operation life resulting from distortion within a semiconductor laser element in the mounting process, and also prevents deterioration in laser characteristics.
The semiconductor laser element 1 is formed by stacking, in a following sequence, an n-type semiconductor substrate 11, an n-type clad layer 12, an active layer 13, a p-type first clad layer 14, a current block layer 15, a p-type second clad layer 16, and a p-type contact layer 17. On the p-type contact layer 17, a p-side ohmic electrode 18 is formed, while in the n-type semiconductor substrate side, an n-side ohmic electrode 19 is formed. A slit 20 is formed to the p-type contact layer 17 to cross a stripe 21 at the center in the direction of an optical resonator, and moreover the p-side ohmic electrode 18 is formed covering the slit 20.
KUME MASAHIRO
KAWADA TOSHIYA
KIDOGUCHI ISAO
Tomoyasu Sakaguchi
Hiroki Naito
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