SEMICONDUCTOR LASER AND MANUFACTURE THEREOF

Japanese Patent JP2000232254

A

To provide a semiconductor laser which is high in output and reliability and easily manufactured at a low cost and a manufacturing method thereof.

This semiconductor laser is manufactured through a manner where a GaAlAs lower clad layer 12, a GaAs bulk active layer 13, and a GaAlAs upper clad layer 14 are grown on a GaAs substrate 11, a light projection edge face and its vicinity are etched as far as the lower clad layer 12, an undoped GaAlAs lower clad layer 15, an undoped GaAlAs core layer 16, and an undoped GaAlAs upper clad layer 17 are selectively and locally regrown on the above etched part through an MOVPE method, a GaAlAs upper clad layer 18 and a GaAs contact layer 19 are grown, an optical waveguide 10 is formed in the direction of light projection through an ECR plasma etching, a front surface electrode and a rear surface electrode are formed, the substrate 11 is cleaved, and then an anti-reflection film is formed on the front edge face, and a high reflecting film is formed on the rear edge face.

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NOZAWA HIROSHI
SASAKI TORU
TENMYO JIRO
SHIBATA TOMOHIRO
SUGO MITSURU

JP3219999A

August 22, 2000

February 10, 1999

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NIPPON TELEGRAPH & TELEPHONE

H01L21/302; H01L21/306; H01L21/3065; H01L21/308; H01S5/00; H01S5/16; H01S5/22; H01S5/343; (IPC1-7): H01S5/22; H01L21/306; H01L21/3065; H01L21/308; H01S5/16; H01S5/343

Toshiro Mitsuishi (2 outside)

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