Title:
SEMICONDUCTOR LASER
Document Type and Number:
Japanese Patent JP3192164
Kind Code:
B2
Abstract:
PURPOSE: To provide a compact electronic pumping type semiconductor laser.
CONSTITUTION: This semiconductor laser is formed of a vacuum vessel 34, which is substantially constituted of a transparent window 36, a first surface 26 and a second surface 38. A semiconductor 10 for generating a laser beam and an electron impulse pumping equipment 23 are installed in the vacuum vessel 34. The first surface retains a cool electron source to the inside direction of the vacuum vessel 34. At least one electrode is fixed on the second surface, and the cool electron source is isolated by a constant distance from the semiconductor with the electrode. An electron threshold current density of the semiconductor 10 is at most 10A/cm2. The semiconductor 10 has a structure showing a laser effect, wherein electron acceleration voltage is at most 30kV. The structure has a hetero-structure constituted of at least three layers. That is, a first layer is an electron pumping layer, a second layer is an active layer for confining carriers, and a third laser is an optical-confining layer.
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Inventors:
Guy Labrunier
Engine Morva
Engine Morva
Application Number:
JP12238591A
Publication Date:
July 23, 2001
Filing Date:
April 24, 1991
Export Citation:
Assignee:
Komitsaria Talenergy Atomique
International Classes:
H01J1/304; H01S5/00; H01S3/0959; H01S5/04; H01S5/20; H01S5/32; (IPC1-7): H01S5/04
Domestic Patent References:
| JP261949A | ||||
| JP6190489A | ||||
| JP59104189A |
Other References:
【文献】欧州特許出願公開359329(EP,A2)
Attorney, Agent or Firm:
Masatake Shiga (3 outside)