SEMICONDUCTOR MEMORY DEVICE - SAMSUNG ELECTRONICS CO LTD

Title:

SEMICONDUCTOR MEMORY DEVICE

Document Type and Number:

Japanese Patent JP2006236579

Kind Code:

A

Abstract:

To provide a start-up circuit capable of minimizing the change of a trip point taking part in power-on time.

A semiconductor memory device is provided with: an internal power supply voltage generating circuit (6) generating internal power supply voltage (VCCP) by converting external power supply voltage (VCC); a bias voltage supply circuit (8) generating bias voltage (VBIAS) clamped at the prescribed level by applying the external power supply voltage; and a start-up circuit (10) having an initializing means (26) for generating start-up signals (VCCH) using a differential amplifier circuit for turning the internal power supply voltage to one of a voltage source and differential input and the bias voltage to the other of the differential input, and for initializing the output terminal of the differential amplifier circuit, while being operation-controlled by the bias voltage.

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JPH0973770	WRITE PULSE GENERATING CIRCUIT
JP4843216	Memory controller
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Inventors:

KIM MYONG-JAE

Application Number:

JP2006148669A

Publication Date:

September 07, 2006

Filing Date:

May 29, 2006

Export Citation:

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Assignee:

SAMSUNG ELECTRONICS CO LTD

International Classes:

G11C11/407; G11C11/413; G11C11/401; H01L21/822; H01L27/04; H03K17/22

Domestic Patent References:

JP2000031807A	2000-01-28
JPH0522100A	1993-01-29
JPH0933576A	1997-02-07
JPH0935484A	1997-02-07
JPH1117509A	1999-01-22

Attorney, Agent or Firm:

Yasunori Otsuka
Shiro Takayanagi
Yasuhiro Otsuka
Shuji Kimura

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