To provide a semiconductor optical element having a constitution to enable reduction of warped substrates.
The semiconductor laser element 1 has a substrate 2 constituted of n-type InP, a semiconductor mesa part 10 provided on the substrate 2, an insulating film 11 covering the upper surface of the substrate 2 and a side surface of the semiconductor mesa part 10, an aluminum oxide film 12 provided on the insulating film 11, a resin part 13 provided on the aluminum oxide film 12, an electrode 14 electrically connected to the semiconductor mesa part 10 and disposed on the resin part 13 and an electrode 15 provided to the rear of the substrate 2. The aluminum oxide film 12 is formed under film formation conditions to allow two-dimensional compressive stress to work when film formation is carried out on the same substrate as the substrate 2. Therefore, the tensile stress working inside the insulating film 11 and the resin part 13 is compensated by the aluminum oxide film 12 and warp of the substrate 2 is also reduced.
Tatsuya Shioda
Shiro Terasaki
Masatoshi Shibata
Ichira Kondo