To provide a semiconductor optical integrated device where a laser device and a photodetector which are monolithically formed on a common semiconductor substrate can be driven by a single power supply.
This device 39 is equipped with a laser device 40 and a photodetector 41 which are monolithically formed on a common InP substrate 21, where the laser device 40 and the photodetector 41 are electrically isolated from each other by an isolation groove 42. The photodetector 41 is possessed of a laminated structure composed of an N-AlInAs layer 22 of thickness 100 nm, an N-InP clad layer 23, an MQW active layer 24, a P-InP clad layer 25, a P-AlInAs layer 26 of thickness 50 nm, a P-type InP clad layer 27, and a P-GaInAs contact layer 28. Al contained in the P-AlInAs layer is oxidized into an Al oxide layer 29 which is formed on each side of a ridge stripe of P-AlInAs layer to serve as a current constriction structure, and the N-AlInAs layer 22 is turned into an Al oxide layer 30 where Al contained in all the layer 22 is all oxidized. The photodetector is electrically isolated from a semiconductor substrate by the Al oxide layer 30 and electrically separated by an isolation groove.
MUKOHARA TOMOKAZU
YAMAGUCHI TAKEJI
KASUKAWA AKIHIKO
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