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Patent Searching and Data


Title:
SEMICONDUCTOR PRESSURE SENSOR
Document Type and Number:
Japanese Patent JP2001074577
Kind Code:
A
Abstract:

To reduce manufacturing cost, to rationalize a manufacturing process, and to allow soldering containing no lead.

A pressure-sensitive element 4' constituted by forming a diaphragm 1, a strain gauge 2 and an electrode part 3 on a semiconductor substrate 4 is jointed to a stem 9 of an insulation substrate. A through-hole 6 with a conductive film 5 formed in a wall face of the hole 6 is arranged in the stem 9, and a conductive material 7 fusion-solidified to seal the through-hole 6 is introduced in the through-hole 6. One portion of the fusion-solidified conductive material 7 is spread up to an electrode 3 surface of the pressure-sensitive element 4', and the electrode part 3 of the element 4' is jointed to the conductive film 5 of the through-hole 6 via the conductive material 7.


Inventors:
SASADA YOSHIYUKI
MIKI MASAYUKI
ICHIKAWA NORIO
KUBOTA MASANORI
Application Number:
JP25005799A
Publication Date:
March 23, 2001
Filing Date:
September 03, 1999
Export Citation:
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Assignee:
HITACHI LTD
HITACHI CAR ENG CO LTD
International Classes:
G01L9/04; H01L29/84; (IPC1-7): G01L9/04; H01L29/84
Attorney, Agent or Firm:
Katsuo Ogawa (1 person outside)