Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2016162476
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of reducing power consumption.SOLUTION: The semiconductor storage device comprises a first voltage generation circuit 120 supplying a voltage to power supply wiring for supplying a power supply voltage to an SRAM cell 113. The first voltage generation circuit 120 receives a first voltage from first wiring, and comprises: first and second circuits 122 and 123; and a first switching circuit 121 that can change over the connections between the power supply wiring and the first circuit 122 and between the power supply wiring and the second circuit 123. The first and second circuits 122 and 123 comprise first and second transistors 20 and 21 which have different drive capabilities, respectively. In an active state, the first voltage generation circuit 120 supplies the first voltage to the power supply wiring, and in a stand-by state, supplies a second voltage or a third voltage via the first or the second circuit.SELECTED DRAWING: Figure 1
Inventors:
FUKUDA JUICHI
Application Number:
JP2015043928A
Publication Date:
September 05, 2016
Filing Date:
March 05, 2015
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
G11C11/413
Attorney, Agent or Firm:
Kurata Masatoshi
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Katsu Sunagawa
Tadashi Inoue
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Katsu Sunagawa
Tadashi Inoue
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
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