Title:
SENSE AMPLIFIER FOR FLASH EPROM
Document Type and Number:
Japanese Patent JP3924339
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To enable a sense amplifier for flash EPROM to be used in a low power source voltage by providing a stand-by charging circuit and a low voltage operating option in a conventional sense amplifier for flash EPROM.
SOLUTION: This sense amplifier has a conventional sense amplifier provided with one piece of a P-channel transistor and one piece of an N-channel transistor for a power downtime, 6 pieces of N-channel transistors for bias circuit and two pieces of floating gate reference memory cells MFR1, MFR2 for comparison. A stand-by charging circuit has two pieces of N-channel transistors for a default output and one piece of a floating gate memory cell and three pieces of N-channel transistors for precharging bit lines. Moreover, one piece of capacitor and two pieces of P-channel transistors for allowing the sense amplifier are provided for the operation in a lower voltage range.
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Inventors:
Fat Sea. Truong
Tim M. Coffman
Tim M. Coffman
Application Number:
JP30955396A
Publication Date:
June 06, 2007
Filing Date:
November 20, 1996
Export Citation:
Assignee:
Texas Instruments Incorporated
International Classes:
G11C16/06; (IPC1-7): G11C16/06
Domestic Patent References:
| JP3241594A | ||||
| JP7235189A | ||||
| JP9270194A |
Attorney, Agent or Firm:
Hideto Asamura
Hajime Asamura
Kuniaki Shimizu
Hayashi Zouzo
Hajime Asamura
Kuniaki Shimizu
Hayashi Zouzo