Title:
MANUFACTURE OF PIEZOELECTRIC ELEMENT
Document Type and Number:
Japanese Patent JP3114459
Kind Code:
B2
Abstract:
PURPOSE: To lower a junction temperature during junction of an anode in a method of manufacturing a piezoelectric element utilizing anode junction process.
CONSTITUTION: A thin film glass layer 4 is formed on the junction surface of a piezoelectric ceramics 1 and a metal electrode 5a is also formed at the opposite surface. A metal electrode 5b is formed on an electrode forming surface of a silicon substrate 2. A piezoelectric ceramics 1 is stacked on the junction surface of the substrate 2 through a glass layer 4 and a voltage is applied across electrodes 5a, 5b from a power supply 6 under the junction temperature atmosphere to integrate the piezoelectric ceramics 1 and substrate 2 by the anode junction. A dielectric strength of a glass layer 4 can be enhanced and the applied voltage is increased as much as such vrithstanal voltage by appling the voltage through the piezoelectric ceramics 1 without applying the voltage in direct to the glass layer 4. As the applied voltage is increased, the junction temperature is lowered to make small residual strain within the piezoelectric element.
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Inventors:
Katsuhiko Tanaka
Youichi Mochida
Eiichi Takada
Youichi Mochida
Eiichi Takada
Application Number:
JP26164793A
Publication Date:
December 04, 2000
Filing Date:
September 24, 1993
Export Citation:
Assignee:
MURATA MANUFACTURING CO.,LTD.
International Classes:
H01L41/22; B81B3/00; B81C1/00; (IPC1-7): H01L41/22
Attorney, Agent or Firm:
Kiyoshi Igarashi
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