SiC field effect transistor

Title:

SiC field effect transistor

Document Type and Number:

Japanese Patent JP6168370

Kind Code:

B2

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Inventors:

Yuki Nakano

Application Number:

JP2015246694A

Publication Date:

July 26, 2017

Filing Date:

December 17, 2015

Export Citation:

Assignee:

ROHM Co., Ltd.

International Classes:

H01L29/78; H01L21/28; H01L21/329; H01L21/336; H01L29/12; H01L29/41; H01L29/861; H01L29/868; H01L29/872

Domestic Patent References:

Attorney, Agent or Firm:

Inaoka cultivation
Mio Kawasaki
Kyoumura Junji

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