PURPOSE: To perfectly perform the transfer a signal charge between a plurality of above-mensioned horizontal transfer parts without generating the remnant part of the signal charge in a solid-state image pick-up device having a plurality of horizontal transfer parts.

CONSTITUTION: A p-type well region 10 is formed on an n-type substrate 11 and an n-type well region 9 is formed on the p-type well region 10. A gate electrode 5 for transfering the signal charge from the first horizontal transfer part 3 to the second horizontal transfer part 4 is formed between a first horizontal transfer part 3 and a second horizontal transfer part 4 on the n-type substrate 1. An n+ type region 7B is formed on the lower side of the gate electrode 5 and the second horizontal transfer part 4 in the surface part of the n-type well region 9. A thickness of the lower side part of the gate electrode 5 in the n+ type region 7B gradually becomes large from the side of a first gate 3 to a second gate electrode 4.