PURPOSE: To prevent the generation of the smear without deteriorating the dielectric strength between a shielding film and a transfer electrode.

CONSTITUTION: An upper part and a side wall of a polycrystalline silicon gate electrode 7, as a transfer electrode, are coated with a first silicon nitride film 13a and a second silicon nitride film 13b. A part of the aslant incident light 12 which is reflected from an interface between an N-type impurity layer 3 and a silicon oxide film 8 is reflected from the bottom of the shielding film 10 again and the reflected light 14 reaches the first silicon nitride film 13a or the second silicon nitride film 13b. However, since a silicon nitride film is a light absorbing film, the reflected light 14 is absorbed the first silicon nitride film 13a or the second silicon nitride film 13b and does not reach an N well layer 4, a charge transfer section. Therefore, the generation of the smear due to the influence by the aslant incident light 12 can be prevented without making a CVD oxide film 9 thin.