To easily and accurately process a nitride film serving as an antireflective film with good productivity without leaving any remaining film on a gate-side wall.
A method of manufacturing a solid-state imaging element includes an antireflective film forming stage of forming a gate oxide film 1a and a gate nitride film 2 of a gate film as antireflective films on the center portion of a photodiode, and the gate nitride film 2 for reflection prevention is not formed on a gate electrode 61 unlike before, so no nitride film is formed on the sidewall of the gate electrode. Consequently, isotropic dry etching is not necessary for processing on the nitride film, and anisotropic dry etching is carried out, so that an etching shift is suppressed small and controllability of a line width is improved.
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Takaaki Yasumura
Takeshi Oshio