Title:
スピン軌道トルク型磁化反転素子及び磁気メモリ
Document Type and Number:
Japanese Patent JP6686990
Kind Code:
B2
Abstract:
A spin-orbit-torque magnetization rotational element includes: a ferromagnetic metal layer, a magnetization direction of the ferromagnetic metal layer being configured to change; a spin-orbit torque wiring which extends in the first direction intersecting a lamination direction of the ferromagnetic metal layer and is joined to the ferromagnetic metal layer; and two via wires, each of which extends in a direction intersecting the spin-orbit torque wiring from a surface of the spin-orbit torque wiring opposite to a side with the ferromagnetic metal layer and is connected to a semiconductor circuit, wherein a via-to-via distance between the two via wires in the first direction is shorter than a width of the ferromagnetic metal layer in the first direction.
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Inventors:
Keita Suda
Tomo Sasaki
Tomo Sasaki
Application Number:
JP2017169733A
Publication Date:
April 22, 2020
Filing Date:
September 04, 2017
Export Citation:
Assignee:
tdk Corporation
International Classes:
H01L29/82; H01L21/8239; H01L27/105; H01L43/08
Domestic Patent References:
| JP201759679A | ||||
| JP201759594A | ||||
| JP201646492A | ||||
| JP201759634A |
Foreign References:
| WO2016021468A1 |
Attorney, Agent or Firm:
Sumio Tanai
Norihiko Ara
Masato Iida
Akihiro Ogino
Norihiko Ara
Masato Iida
Akihiro Ogino