Title:
STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2021048184
Kind Code:
A
Abstract:
To provide a storage device capable of performing appropriate writing to a resistance change storage element.SOLUTION: A storage device according to an embodiment, comprises: a first resistance change storage element in which a first low resistance state or a first high resistance state is set in accordance with a writing current; a first transistor 51 which has a first gate, a first source, and a first drain, and into which a current common with a current flowing in the first resistance change storage element flows in a first writing period; a voltage holding part 53 that holds a first voltage applied to the first gate for the first writing period; and a second transistor 52 which has a second gate, a second source, and a second drain, in which the first voltage held by the voltage holding part is applied to the second gate in a second writing period after the first writing period, and into which the current common with the current flowing in the first resistance change storage element flows.SELECTED DRAWING: Figure 1
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Inventors:
FUJINO YORINOBU
Application Number:
JP2019168649A
Publication Date:
March 25, 2021
Filing Date:
September 17, 2019
Export Citation:
Assignee:
KIOXIA CORP
International Classes:
H01L21/8239; H01L27/105; H01L43/08; H01L45/00; H01L49/00
Attorney, Agent or Firm:
Suzue International Patent Office