記憶素子及び記憶装置 - ソニー株式会社

Title:

記憶素子及び記憶装置

Document Type and Number:

Japanese Patent JP4816314

Kind Code:

B2

Abstract:

To provide a reliable storage element stably holding information stored by utilizing a change in the resistance state of a thin film for storage included in a storage layer.

The storage layer 6 is sandwiched between first and second electrodes 1, 5. In the storage layer 6, an insulating layer 2 of which thermal conductivity is not less than 15 W/mK, a thin film 3 for storage made of rare earth element oxide, and an ion source layer 4 containing Cu, Ag, or Zn to be ionized are laminated. In the storage element 10, the storage layer 6 is connected to one electrode 1 through an opening formed in the insulating layer 2.

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Inventors:

Takeyuki Sone
Akira Kawauchiyama
Satoshi Sasaki
Tetsuya Mizuguchi

Application Number:

JP2006216180A

Publication Date:

November 16, 2011

Filing Date:

August 08, 2006

Export Citation:

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Assignee:

ソニー株式会社

International Classes:

H01L27/10; H01L45/00; H01L49/00

Domestic Patent References:

JP2006196537A
JP2004342843A

Attorney, Agent or Firm:

Yoshitsuno Kakuda
Hitoshi Ito

Previous Patent: JPS4816313

Next Patent: インクジェット記録装置