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Title:
STRUCTURE OF SPUTTERING TARGET
Document Type and Number:
Japanese Patent JP2004143480
Kind Code:
A
Abstract:

To prevent the occurrence of abnormal discharge in the vicinity of an air suction groove of a target in sputtering, the generation of particles due to the abnormal discharge, and the decrease in yield of a semiconductor device by the influence of the particles.

In a sputtering target, the generation of particles due to abnormal discharge is prevented by decreasing the sectional area of a gap between an O-ring and an O-ring groove at the vacuum side (the air suction groove side).


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Inventors:
YANO TOSHIHIKO
MURAKAMI TAKASHI
Application Number:
JP2002306936A
Publication Date:
May 20, 2004
Filing Date:
October 22, 2002
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
C23C14/34; (IPC1-7): C23C14/34
Attorney, Agent or Firm:
Fumio Iwahashi
Tomoyasu Sakaguchi
Hiroki Naito



 
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