SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Title:

SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Document Type and Number:

Japanese Patent JP2014072224

Kind Code:

A

Abstract:

To perform a heat treatment on a substrate while suppressing rise of a substrate temperature to inhibit thermal budget.

A substrate processing apparatus comprises: a processing chamber for processing a substrate; a substrate support part which is arranged in the processing chamber and has a conductive substrate loading surface parallel with the substrate on the side where the substrate is loaded, for supporting the substrate in a spaced manner at a predetermined distance from the substrate loading surface; a microwave supply part for supplying into the processing chamber, microwave for performing a heat treatment on the substrate supported by the substrate support part; a gas supply part for supplying a gas on a surface and a rear face of the substrate supported by the substrate support part at the time of heat treatment on the substrate by microwave; and a discharge part for discharging the gas from the processing chamber.

More Like This:

JP6966402	Substrate processing equipment, manufacturing method of semiconductor equipment, and electrodes of substrate processing equipment
JP3231996	VAPOR GROWTH DEVICE
WO/2023/008152	PLASMA PROCESSING APPARATUS

Inventors:

AKAO NORINOBU
ISHII AKINORI
UMEKAWA AYAFUMI
YASHIMA SHINJI
TAIRA YUKI

Application Number:

JP2012214835A

Publication Date:

April 21, 2014

Filing Date:

September 27, 2012

Export Citation:

Click for automatic bibliography generation Help

Assignee:

HITACHI INT ELECTRIC INC

International Classes:

H01L21/31; H01L21/268; H01L21/316

Attorney, Agent or Firm:

Polaire Patent Business Corporation

Previous Patent: MAGNETIZATION DEVICE AND MAGNETIZATION METHOD

Next Patent: COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME