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Title:
基板処理装置、半導体装置の製造方法及びプログラム
Document Type and Number:
Japanese Patent JP6976279
Kind Code:
B2
Abstract:
There is provided a technique that includes a process chamber configured to process a substrate; a substrate-mounting part configured to support the substrate in the process chamber; a gas supply part configured to supply a gas to the process chamber; a high-frequency power supply part configured to supply high-frequency power of a predetermined frequency; a first resonance coil wound to surround the process chamber and configured by a first conductor that forms plasma at the process chamber When the high-frequency power is supplied; a second resonance coil. wound to surround the process chamber and configured by a second conductor that forms plasma at the process chamber when the high-frequency power is supplied; and a controller configured to control the high-frequency power supply part so that a period of power supply to the first resonance coil does not overlap with a period of power supply to the second resonance coil.

Inventors:
Akio Yoshino
Yukinori Yutani
Hachiman Tachibana
Application Number:
JP2019056673A
Publication Date:
December 08, 2021
Filing Date:
March 25, 2019
Export Citation:
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Assignee:
Kokusai electric inc.
International Classes:
H01L21/31; C23C16/505; H01L21/316; H05H1/46
Domestic Patent References:
JP2016082180A
JP2001023961A
JP2017069254A
JP2020523739A
Foreign References:
WO2017117213A1
US20140263181