Title:
SYNTHESIS OF DIAMOND
Document Type and Number:
Japanese Patent JPS58125690
Kind Code:
A
Abstract:
PURPOSE:To grow a high quality diamond, by using a different material at a part of cylindrical heater made of e.g. carbon from the material at the rest part of the heater, thereby making the temperature uniform in the crystal growth region, and keeping a temperature difference between the carbon source and the seed crystal. CONSTITUTION:A seed crystal 1, a solvent metal 2, and a carbon source 3 are placed in a cylindrical heater made of carbon or a metal. The cylindrical heater is composed of a part 7 having high resistance and a part 8 having low resistance, and the heat generation at the part 8 having low resistance is adjusted to lower than that of the part 7 having high resistance. The temperature distribution in the part (crystal growth region) below the solvent metal 2 is made uniform by this arrangement, and the temperature gradient of the carbon source 3 is increased. The whole reaction chamber can be utilized effectively by this process, and a large-sized single crystal can be synthesized in high efficiency.
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Inventors:
YOSHIDA AKIHITO
Application Number:
JP422682A
Publication Date:
July 26, 1983
Filing Date:
January 14, 1982
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
C01B31/06; B01J3/06; C30B9/10; C30B13/02; (IPC1-7): C01B31/06; C30B11/04; C30B29/04
Attorney, Agent or Firm:
Seiichi Urata