PURPOSE: To quicken the rise and fall of a word line potential and to reduce the number of circuit elements by making a time constant circuit delay the switching point of an electric power source from the switching point of a word line.
CONSTITUTION: Respective terminating circuits 31W3n employ the same constitution. Circuit 31 is provided with emitter follower transistor T11 whose base is connected to word line WL, time constant circuit 4 consisting of capacitor C11 and resistance R11 delaying the output of T11, T21 whose emitter is connected to common constant current source ΔIH while its collector is connected to hold line HL by receiving the output of circuit 4, and resistance R21 connecting the base of T21 to common bias current source IBS. Then, T21WT2n constitute the current switch together with electic current source ΔIH. As a result, no overcurrent flows to a corresponding word line in selection and current ΔIH flows for a while after the cross point between selected and unselected word line potentials, so that the word line rises rapidly.
JPH01248394 | SEMICONDUCTOR MEMORY DEVICE |
JPS594862 | [Title of the Invention] Integrated circuit |