THIN FILM TRANSISTOR DISPLAY PANEL AND MANUFACTURING METHOD THEREFOR

Japanese Patent JP2005123620

A

To homogenize the parasitic capacitance between a gate electrode and a drain electrode.

A gate line having a gate electrode 124 is formed on a substrate, and a gate insulating film covering the gate line is laminated thereon. Next, a semiconductor layer 151 is formed on the gate insulating film, a data line 171 having a source electrode 173 making contact with the semiconductor layer, and a drain electrode 175 overlapping with the gate electrode 124, are formed; a protective film covering the semiconductor layer is formed; and a pixel electrode connected with the drain electrode is formed. In this case, the semiconductor layer, the data line and the drain electrode or the pixel electrode are patterned using a photosensitive film pattern obtained by exposing and developing a photosensitive film in the exposure process of a photoetching step as a mask, and a boundary line of the gate electrode overlapping with the drain electrode is arranged to be perpendicular to the scanning direction of exposure for the photosensitive film in the exposure process.

WO/2004/027740	DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
JP2008083448	INTEGRATED DRIVING DEVICE OF DISPLAY APPARATUS
JP7265658	Display device

DEN SHOEKI
LEE SEIEI
CHOI KWON-YOUNG
ZEN SAIKO

JP2004298534A

May 12, 2005

October 13, 2004

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SAMSUNG ELECTRONICS CO LTD

G02F1/1368; G02F1/136; G09F9/30; H01L21/336; H01L21/77; H01L21/84; H01L27/12; H01L29/417; H01L29/786; (IPC1-7): H01L21/336; G02F1/1368; G09F9/30; H01L29/786

JP2003121866A	2003-04-23
JP2002190605A	2002-07-05

Kazuo Shamoto
Tadashi Masui
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Otsuka Sumie

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