Title:
TITANIUM NITRIDE SPUTTERING TARGET
Document Type and Number:
Japanese Patent JP2707185
Kind Code:
B2
Abstract:
PURPOSE: To provide a titanium nitride sputtering target hardly generating particles at the time of sputtering and capable of stably forming a high quality titanium nitride film.
CONSTITUTION: This titanium nitride sputtering target is made of a bonded body of titanium nitride particles formed by sintering and nitriding Ti particles and pores having 5-20μm average diameter exist in this target by 100-500 per 1mm2 area, or pores having 5-20μm average diameter exist in this target by 100-500 per 1mm2 area and the ratio of the average particle diameter of the titanium nitride particles to the average diameter of the pores is 1-100. The pores and the titanium nitride particles are controlled by regulating Ti powder as starting material, sintering conditions, etc.
Inventors:
Sawada Susumu
Fujioka Masaaki
Takeo Ohashi
Osamu Kano
Fujioka Masaaki
Takeo Ohashi
Osamu Kano
Application Number:
JP12967192A
Publication Date:
January 28, 1998
Filing Date:
April 22, 1992
Export Citation:
Assignee:
Japan Energy Co., Ltd.
International Classes:
C04B35/58; C23C14/34; (IPC1-7): C23C14/34
Domestic Patent References:
| JPS6291470A |
Attorney, Agent or Firm:
Takeshi Imai