MICROWAVE PLASMA PROCESSING METHOD AND APPARATUS THEREOF

Japanese Patent JPS6016424

A

PURPOSE:To realize high speed processing without giving damage to an object to be processed irrespective of a kind of reaction gas by sending the reaction gas activated by the microwave signal propagated in the waveguide to the processing chamber through a plasma shielding means which prevents leak of plasma and allows passage of active seed and processing an object to be processed with such active seed. CONSTITUTION:A quartz processing reservoir 23 having an exhaust port 22 is disposed in the vicinity of waveguide 21 being connected to the microwave generator through an isolator. An object to be processed 26 supported by a table 27 is placed within such reservoir 23, a reaction gas inlet pipe 24 consisting of a ceramic pipe such as alumina is caused to pass through the waveguide 21 at a right angle with an interval corresponding to such object and such pipe 24 is extended to the reservoir 23. A plasma shielding means consisting of Al net is provided between the lower end of inlet pipe 24 and an object 26 to be processed, only the activated seed is sent to the reservoir 23 and it is placed in contact with the object to be processed.

JP7362431	Film deposition equipment, how to remove the target unit, and how to attach the target unit
JP4608583	Toroidal plasma chamber
WO/1999/064644	ION ENERGY ATTENUATION

FUJIMURA SHIYUUZOU
YANO HIROSHI

JP12451183A

January 28, 1985

July 08, 1983

Click for automatic bibliography generation  

FUJITSU LTD

H05H1/46; H01J37/32; H01L21/302; H01L21/3065; (IPC1-7): H01L21/302

JPS5776844A	1982-05-14
JPS5696840A	1981-08-05

Sadaichi Igita

Previous Patent: A signal processor, an imaging device, and a signal processing method

Next Patent: SEMICONDUCTOR WAFER DRYING APPARATUS