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Patent Searching and Data


Title:
PRODUCTION OF SEMICONDUCTOR PRESSURE SENSOR
Document Type and Number:
Japanese Patent JPH06102120
Kind Code:
A
Abstract:

PURPOSE: To reduce the number of working processes and to enhance workability, yield and reliability by anodically bonding a sensor substrate and a support member and etching the sensor substrate using the support member as a musk material to form a thin film part.

CONSTITUTION: A sensor substrate 1 having gauge elements 7 formed thereon and a support member 2 having a through-hole 5 are bonded by anodic bonding. The support member 2 and the through-hole 5 are used as a mask and the sensor substrate 1 is etched to form a membrane part to produce a pressure sensor. Since the support member is used as the mask, it becomes unnecessary to perform a photolithographic process and the number of processes can be reduced. Since the sensor substrate 1 and the support member 2 are bonded at first, strength, workability and yield are enhanced. The reliability of a bonded part is enhanced because of the anodic bonding.


Inventors:
AOKI KENICHI
YAMAMOTO YOSHIKI
TAKAHASHI YUKIO
Application Number:
JP24952092A
Publication Date:
April 15, 1994
Filing Date:
September 18, 1992
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
G01L9/04; G01L9/00; H01L29/84; (IPC1-7): G01L9/04; H01L29/84
Attorney, Agent or Firm:
Ogawa Katsuo