PURPOSE: To make the etching rate in a substrate uniform in the state of using such a film for which the etching rate depends on temp. when the film is etched by titled etching as a substrate to be used, by giving a temp. difference in the substrate.

CONSTITUTION: A substrate 13 to be etched of such a film as an MoSi2 film of which the etching rate depends on temp. is placed on the electrode 12 in a vacuum vessel 11 having the electrodes which are opposed to each other and on which high frequency or DC electric power can be impressed. A reactive gas is introduced into the vessel 11, and a high frequency is impressed between the electrodes to discharge electrically the gas. The substrate 13 is etched in the electrically discharged gas. The electrode 12 here has a cavity 15, in which a liquid mixture 16 composed of, for example, ethylene glycol and water is contained. The temp. of the liquid 16 is controlled with a controller 17. If the thickness of the cavity 15 and the surface of the electrode 12 is made thin in the internal part and thick in the outside circumferential part, and the liquid 16 having a specified temp. is circulated, the surface of the electrode 12 has the temp. distribution wherein the temp. is high at the center and is low on the outside circumference. The inside of the substrate 13 has the similar temp. distribution as well, whereby the uniformity in the etching is maintained.