Title:
TRANSFER METHOD OF THIN FILM DEVICE, THIN FILM DEVICE, THIN FILM INTEGRATED CIRCUIT DEVICE, ACTIVE MATRIX SUBSTRATE AND LIQUID CRYSTAL DISPLAY DEVICE
Document Type and Number:
Japanese Patent JP3809710
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To enable independently and freely selecting a substrate used at the time of manufacturing a thin film device and a substrate used at the time of practically using a product, and prevent deterioration of characteristics of the thin film device.
SOLUTION: An isolation layer 120 is arranged on a substrate 100, and a thin film device 140 like a TFT is formed on the substrate 100. For example, a laser light 10 is cast from the substrate 100 side, so that peeling is generated on the isolation layer. The thin film device 140 is bonded to a transferring member 180 via an adhesive layer 160, and the substrate 100 is isolated. Thereby the desired thin film device 140 can be transferred on any kind of substrate 100. Beam scanning is performed with the laser light 10. An N-th beam irradiation region 20 (N) is scanned with a beam so as not to mutually overlap with other irradiation region, e.g. and (N+1)th beam irradiation region 20(N+1).
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Inventors:
Satoshi Inoue
Tatsuya Shimoda
Tatsuya Shimoda
Application Number:
JP19308197A
Publication Date:
August 16, 2006
Filing Date:
July 03, 1997
Export Citation:
Assignee:
Seiko Epson Corporation
International Classes:
G02F1/136; H01L27/12; G02F1/1368; H01L21/02; H01L21/336; H01L29/786; (IPC1-7): H01L27/12; G02F1/136; H01L29/786; H01L21/336
Domestic Patent References:
| JP7504782A | ||||
| JP7294961A |
Attorney, Agent or Firm:
Takekoshi Noboru
Enami Tomokazu
Yasushi Kuroda
Inoue Ichi
Yukio Fuse
Mitsue Obuchi
Enami Tomokazu
Yasushi Kuroda
Inoue Ichi
Yukio Fuse
Mitsue Obuchi