To provide a vapor deposition apparatus for forming a thin film with high efficiency, by achieving a stable film-forming process.

The vapor deposition apparatus 1 comprises a substrate-holding means (13), and a vapor deposition source (20) which is placed so as to face the substrate-holding means (13) and produces an evaporated raw material. A distance (h) between the vapor deposition source (20) and the substrate holding means (13) shall be less than 1 by a ratio with respect to the maximum width (d) of the substrate-holding means (13) facing the vapor deposition source (20).